Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires
Academic Article
Publication Date:
2013
abstract:
In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2 has monoclinic structure with different orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Iris type:
01.01 Articolo in rivista
Keywords:
Silicon carbide; Silicon dioxide; Nanowires; Hafnium oxide; Nanocrystals
List of contributors:
Fabbri, Filippo; Attolini, Giovanni; Rossi, Francesca; Salviati, Giancarlo
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