CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON

Academic Article

Publication Date:

1990

Iris type:

01.01 Articolo in rivista

List of contributors:

Priolo, Francesco; Rimini, Emanuele; Spinella, ROSARIO CORRADO

Authors of the University:

SPINELLA ROSARIO CORRADO

Handle:

https://iris.cnr.it/handle/20.500.14243/19376

Published in:

APPLIED PHYSICS LETTERS

Journal