Data di Pubblicazione:
2011
Abstract:
The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers. © 2011 IEEE.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
THz Schottky detectors
Elenco autori:
Giovine, Ennio; Notargiacomo, Andrea
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