Trilayer electron-beam lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.