Data di Pubblicazione:
1998
Abstract:
We present an analytic model that explains the self-ordering of quantum nanostructures grown on nonplanar surfaces. Self-limiting growth in these structures results from the interplay among growth-rate anisotropy, curvature-induced capillarity, and, for alloys, entropy of mixing effects. Experimental results on self-limiting organometallic chemical vapor deposition on corrugated surfaces are in quantitative agreement with the model. The implications of the self-limiting growth characteristics on the self-ordering of quantum wells, wires, and dots are discussed.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; LIMITING GROWTH; PHASE EPITAXY; WIRES; GAAS; ALGAAS; WELLS
Elenco autori:
Biasiol, Giorgio
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