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Proposal for a Datta-Das transistor in the quantum Hall regime

Articolo
Data di Pubblicazione:
2012
Abstract:
We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Fazio, Rosario; Giovannetti, Vittorio; Chirolli, Luca; Venturelli, Davide; Taddei, Fabio
Autori di Ateneo:
TADDEI FABIO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/232461
Pubblicato in:
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Journal
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Dati Generali

URL

http://link.aps.org/doi/10.1103/PhysRevB.85.155317
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