Isothermal defect annealing in semiconductors investigated by time-delayed Mössbauer spectroscopy: application to ZnO

The theory for so-called Time-Delayed-Measurements is outlined. This method allows for isothermal annealing studies in emission Mössbauer spectroscopy utilizing radioactive beams. The usefulness of this method is illustrated by the example of the annealing of a magnetic defect in ZnO.