Switching quantum transport in a three donors silicon fin-field effect transistor

We switch the transport along different paths in a system constituted by a phosphorus donor in a silicon quantum dot in complementary metal-oxide-semiconductor technology, coupled with two donors at the source side. The standard Coulomb blockade pattern created by the transport through the D0 neutral state of an individual donor located in the channel of the device is modified by two additional randomly diffused nearby donors. By varying the control voltages, the fin-field effect transistor acts as a quantum device which may be used to control alternative current paths through different donors.