High Quality GaAs single photon emitters on Si substrate

Contributo in Atti di convegno

Data di Pubblicazione:

2013

Abstract:

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperature on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly provided by antibunching in the second order correlation function as measured with a Hanbury Brown and Twiss interferometer.

Tipologia CRIS:

04.01 Contributo in Atti di convegno

Keywords:

Single photon; emitter; GaAs/Si

Elenco autori: