Data di Pubblicazione:
2000
Abstract:
Pulsed laser ablation has been utilized in our laboratory to deposit thin films of semiconducting oxides such as indium
oxide and tin oxide. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser ls532 nm.
on silicon 100. substrates. A comparison has been performed, among indium oxide, tin oxide, and multilayers of indium
and tin oxides, to evaluate their use as NO gas sensors. The influence of physical parameters, such as substrate temperature
and laser fluence, on the velocity response of the films and on their resistance variation, has been investigated. The deposited
films have been characterized by X-ray diffraction XRD. and electric resistance measurements.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Laser ablation; Metallic oxide; Gas sensor; Thin film
Elenco autori:
Giardini, Anna; Marotta, IDA VERONICA; Parisi, GIOVANNI POMPEO; Orlando, Stefano
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