Reflectance measurements and optical constants in the EUV-VUV region for SiC with different C/Si ratio

Reflectance versus incidence angle measurements have been performed from 5 to152 nm on samples of SiC with a different C/Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.