Persistent photoconductivity, hysteresis and field emission in MoS2 back-gate field-effect transistors
Contributo in Atti di convegno
Data di Pubblicazione:
2019
Abstract:
We present the electrical characterization of mono and bilayer MoS 2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
field effect transistors; field emission; hysteresis; MoS 2; photoconductivity; Schottky barrier
Elenco autori:
DI BARTOLOMEO, Antonio; Iemmo, Laura; Luongo, Giuseppe; Urban, Francesca; Grillo, Alessandro; Giubileo, Filippo
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