Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas

We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared. © 2011 IEEE.