High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

The authors have developed a multistep molecular-beam epitaxy growth technique which allows them to grow InSb quantum dots with high structural perfection and high density. This technique consists in the deposition at a very low temperature followed by a properly designed annealing step. Fully strained InSb/GaSb quantum dots with a density exceeding 71010 cm-2 and lateral sizes in the 20-30 nm range have been obtained. Narrow photoluminescence emission is obtained around 3.5 m up to room temperature.