Al+ Implanted 4H-SiC p(+)-i-n Diodes: Forward Current Negative Temperature Coefficient

Vertical 4H-Silicon Carbide p(+)-i-n diodes are obtained by a selective area 1.5 x 10 (20) cm(-3) Al+ ion implantation of the anodes. These diodes are fabricated with identical steps except post-implantation annealing that is 1650 degrees C/25 min and 1950 degrees C/5 min. Electrical characterization in the temperature range 25 degrees C-290 degrees C is performed. The 1650 degrees C/25 min diodes have forward currents with a positive temperature coefficient. The 1950 degrees C/5 min diodes have forward current characteristics with a crossover point from a positive to a negative temperature coefficient that makes such characteristics almost stable versus temperature.