Growth conditions analyis and characterization of high perfection InGaAs/InP layers grown by hydride VPE

Both lattice-matched and mismatched InxGa(1-x)As epitaxial layers grown by hydride VPE technique have been characterized by Scanning Electron Microscope for the study of the surface morphology, X-ray microanalysis in a SEM, Transmission Electron Microscope and X- Ray Double Crystal Diffractometry. The layers were deposited on (001) oriented p-type InP substrates at temperature in the 650-670 °C range. The layers resulted to be unintentionally doped to about 1016 cm-3 and their composition was determined by X-ray microanalysis and X-Ray Double Crystal Diffractometry.