Publication Date:
1999
abstract:
Ion implantation in silica is a useful way to generate unusual properties in glasses. To use ion implantation as a synthesis technique, it is necessary to understand the dynamics of the process. Silica glass samples, implanted with Mn at 38 keV energy and fluences of 1 × 1016, 5 × 1016 and 10 × 1016 ions cm-2 were investigated mainly by X-ray photoelectron (XPS), X-ray-excited Auger electron (XE-AES) and UV-photoelectron (UPS) spectroscopies. Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) measurements, optical absorption and electron paramagnetic resonance (EPR) investigations were also performed. Mn silicate is present in all samples, while in the 5 × 1016 and 10 × 1016 samples Mn silicide compounds form in the most damaged region. These findings give further support to the two-step model as a simple method to predict the final compounds resulting from ion irradiation of a solid matrix.
Iris type:
01.01 Articolo in rivista
Keywords:
TRANSITION-METAL IONS; AMORPHOUS SIO2; FUSED-SILICA; PHOTOEMISSION; SPECTROSCOPY
List of contributors:
Barison, Simona
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