Tuning of the Optical Properties of In-rich InxGa1-xN (x=0.82-0.49) Alloys by Light-ion Irradiation at Low Energy
Articolo
Data di Pubblicazione:
2013
Abstract:
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1-xN alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
III-nitrides; Photoluminescence; Hydrogen in semiconductors; Impurities and defects
Elenco autori:
AMORE BONAPASTA, Aldo; Filippone, Francesco; Pettinari, Giorgio
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