"Diamond MESFET performance improvement by layout optimization"

Hydrogen terminated diamond is a promising materialfor metal semi-conductor field effect transistors (MESFETs) fabrication and research effort is focused on diamond quality improvement. We focus our attention on device layout and structure to improveRF performances, designed on the basis of diamond physical properties, keeping into account characterization of previously fabricated devices. Significant increase of current gain cut-off frequency fT, from 3.4 GHz to 6.7 GHz, has been obtained, while maximum oscillation frequency fMAXraise from 10.4 GHz to 11.8 GHz