Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration
Conference Paper
Publication Date:
2015
abstract:
The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Calibration; Doping Profiling; RF Characterization; Scanning Microwave Microscopy (SMM); Semiconductors
List of contributors:
Lucibello, Andrea; Michalas, Loukas; Proietti, Emanuela; Marcelli, Romolo
Book title:
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on