Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

We investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterization of this new kind of QDs, shows very narrow lineshape at room temperature and a strong reduction of the temperature dependent quenching of the emission (a factor of 3 from 30 K to 300 K). The quantum external efficiency obtained by inserting such QDs into light emitting diode structures, despite the low dot density (1.6*109 cm-2), is 0.03%. This value corresponds to an individual QD efficiency about 30% higher than that reported in the literature for state of art InGaAs/InGaAs QD LEDs.