Publication Date:
2006
abstract:
Mixed narrow band gap III-V alloys such as GaAsN and InGaAsN are attracting considerable interest for both their fundamental properties and the possibility to use them in novel solar cells for space applications.
Iris type:
01.01 Articolo in rivista
Keywords:
metalorganic vapor phase epitaxy; semiconducting gallium arsenide
List of contributors:
Musayeva, Nahida; Calicchio, Marco; Attolini, Giovanni; Avella, Maurizio; Bosi, Matteo; Pelosi, Claudio
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