SAMARIUM AS A SCHOTTKY-BARRIER ON P-TYPE-SILICON

The electrical and structural characteristics of the samarium-silicon contact have been investigated after thermal treatments up to 300°C for 30 min in vacuum. Good Schottky barriers have been realized for treatments up to 200°C obtaining a barrier height of 0.70 eV. The electrical barrier properties degrade at temperatures above 250°C, where a continuous Layer of SmSi1.7 is formed.