THERMAL AND NON-THERMAL KINETICS OF DEFECTS AND DOPANT IN SI

A modeling approach is formalized and implemented to investigate the kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions induced by laser irradiation of Si. The master equations for the evolution of the defect-impurity system is rigorously obtained starting from the Boltzmann's formalism. The formalism allows to simulate beyond the hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. Comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the general reliability of the Si self-interstitial clusters energetic derived using conventional thermal processes. The impact of the formalism for other non-conventional annealing techniques is discussed.