Crossed Andreev reflection-induced magnetoresistance

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a currentin- plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed 80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.