Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

Academic Article

Publication Date:

1994

abstract:

The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied

Iris type:

01.01 Articolo in rivista

Keywords:

SCHOTTKY-BARRIER DIODES; MOLECULAR BEAM EPITAXY

List of contributors: