Molecular beam epitaxy: fundamentals, historical background and future prospects

Molecular beam epitaxy (MBE) is an epitaxial technology particularly suited for the preparation of advanced materials, structures and nanostructures. MBE is characterised by specific two- and three-dimensional growth mechanisms, the occurrence of which can be selected according to the value of lattice mismatch between substrate and epitaxial deposit; the two mechanisms allow for the growth of structures either with interfaces smooth on the atomic scale or with self-assembled nanoisland, where carriers can be two- or three-dimensionally quantum confined, respectively. MBE demonstrated most of the structures where quantum confinement of carriers results in innovative properties, which can be adroitly engineered for both fundamental studies and technological applications. A number of researches, which were awarded Nobel prizes, were directly related to achievements of MBE, which allowed for design and preparation of the new structures. MBE also evolved into a production technology, by which a number of advanced devices can be mass-produced.