"Cr induced nanocrystallization of a -Si thin films: Its mechanis"

The mechanism involved in the metal induced a -Si crystallization has been investigated by X-ray absorption spectroscopy for Cr. The growth process involves the deposition on fused silica (FS) of FS/Cr(200nm)/a -Si(400nm) stacks (FCS) and FS/a -Si(400nm)/Cr(200nm) stacks (FSC) at different substrate temperatures by electron beam evaporation technique. X-ray absorption spectra were measured at different incidence angles (total reflection, 10° and 45°) to understand the evolution of the local structure of Cr components diffusing from bottom to top or from top to bottom in FCS and FSC stacks respectively. From the qualitative and quantitative analysis, we may conclude that, in case of Cr induced MIC, at first Cr diffuses into the a -Si matrix, then it partially reacts with a -Si to form CrSi 2. This will later act as crystallizing seed for a -Si crystallization.