Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling
Conference Paper
Publication Date:
2009
abstract:
The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose an equivalent circuit model which accounts for most of the physical contributions present in the structure.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
RF MEMS; Charging Effects
List of contributors:
DE ANGELIS, Giorgio; Bartolucci, Giancarlo; Proietti, Emanuela; Lucibello, Andrea; Marcelli, Romolo
Book title:
Proceedings of the Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS, DTIP 2009, 1-3 April 2009, Roma, Italy