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Pressure sensing by flexible, organic, field effect transistors

Academic Article
Publication Date:
2006
abstract:
A mechanical sensor based on a pentacene field effect transistor has been fabricated. The pressure dependence of the output current has been investigated by applying a mechanical stimulus by means of a pressurized air flow. Experimental results show a reversible current dependence on pressure. Data analysis suggests that variations of threshold voltage, mobility and contact resistance are responsible for current variations. Thanks to the flexibility of the substrate and the low cost of the technology, this device opens the way for flexible mechanical sensors that can be used in a variety of innovative applications such as e-textiles and robotic interfaces. (c) 2006 American Institute of Physics.
Iris type:
01.01 Articolo in rivista
Keywords:
THIN-FILM-TRANSISTORS; THRESHOLD VOLTAGE; ARTIFICIAL SKIN; LARGE-AREA; SENSORS
List of contributors:
Bonfiglio, Annalisa
Handle:
https://iris.cnr.it/handle/20.500.14243/168237
Published in:
APPLIED PHYSICS LETTERS
Journal
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