CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy

Academic Article

Publication Date:

1998

abstract:

Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys on Si and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or after the CVD growth. The information obtained was correlated with AFM analysis results in order to optimize the growth parameters for an improved morphological quality of the alloy layers.

Iris type:

01.01 Articolo in rivista

Keywords:

Atomic force microscopy; Chemical vapor deposition; Ellipsometry; Excimer lasers; Morphology; Pulsed laser applications; Silicon alloys; Surface properties; Vacuum applications; Power spectral density; Single wavelength ellipsometry; Surface smoothing; Ultra high vacuum chemical vapor deposition; Semiconductor growth

List of contributors:

Larciprete, Rosanna

Authors of the University:

LARCIPRETE ROSANNA

Handle:

https://iris.cnr.it/handle/20.500.14243/243789

Published in:

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Journal

Overview

URL

http://www.scopus.com/inward/record.url?eid=2-s2.0-0031633531&partnerID=40&md5=561ab16b5087d1529f9c724ceac44ca9

CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy

Larciprete, Rosanna

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Overview

URL