Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and the conduction bands that can be distinguished for their enhanced density of states at particular wave-number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for n-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide.