Resistance Instability in Cu-damascene Structures during the Isothermal Electromigration Test
Conference Paper
Publication Date:
2005
abstract:
The Isothermal Test is a promising wafer-level tool to characterize electromigration also in Cu-damascene metallizations, when a correct temperature determination is employed. In this work an improved feedback algorithm is proposed to reduce the observed resistance instability in the stress phase, when the copper structures
are approaching the failure.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
ISOT; wafer level; electromigration; reliability
List of contributors:
Scorzoni, Andrea; Impronta, MAURIZIO PIO
Book title:
Int. Integrated Reliability Workshop Final Report 2005