Visible and UV pulsed laser processing of the Ti/Si(0 0 1) interface studied by XPS microscopy with synchrotron radiation
Academic Article
Publication Date:
2001
abstract:
The composition and spatial distribution of different Ti-Si phases formed by irradiation of a 5 ML Ti film deposited on Si(1 0 0) with visible and UV short laser pulses was studied employing scanning XPS microscopy with lateral resolution of 0.12 ?m. The lineshape of the Ti2p and Si2p spectra and the Ti2p and Si2p maps of the laser processed area have revealed that TiSi is produced in the external region of the laser spots, where the surface temperature does not exceed 500°C, whereas in the central area TiSi2 forms. The synthesis of more diluted alloys is consistent with the thermal gradient existing on the Ti/Si(0 0 1) surface during laser irradiation. © 2001 Elsevier Science B.V.
Iris type:
01.01 Articolo in rivista
Keywords:
Pulsed laser deposition; Silicon wafers; Synchrotron radiation; Titanium; Ultraviolet radiation; X ray photoelectron spectroscopy; Titanium silicides; Surface chemistry
List of contributors:
Larciprete, Rosanna
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