Electron accumulation layer on clean In-terminated InAs(0 0 1)(4 × 2)-c(8 × 2) surface
Academic Article
Publication Date:
2001
abstract:
We have investigated clean In-terminated InAs(0 0 1)(4 × 2)-c(8 × 2) surface by LEED, STM and high-resolution core-level and valence band (VB) spectroscopies. The In4d and As3d core levels showed the presence of chemically shifted components. The decomposition of In4d core level exhibited a new surface component located close to that of free indium metal. This indicates that the origin of the electron emission at the Fermi level measured in the VB spectra is probably due to the free In charge. STM measurements showed a uniform distribution of charge on the In-rows, which are highly ordered over large areas of the surface. © 2001 Elsevier Science B.V.
Iris type:
01.01 Articolo in rivista
Keywords:
Electron emission; Fermi level; Interfaces (materials); Low energy electron diffraction; Scanning tunneling microscopy; High resolution core level spectroscopy; Valence band spectroscopy; Semiconducting indium compounds
List of contributors:
Perfetti, Paolo; DE PADOVA, IRENE PAOLA; Larciprete, Rosanna; Quaresima, Claudio
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