Chemical vapor deposition of ZrO2 thin films from zirconium precursors containing N-ligands

Excellent quality ZrO2 thin films were deposited on alumina and glass substrates by chemical vapor deposition in a hot wall reactor at reduced pressure using tetrakis(diethylamido)zirconium [Zr(NEt2)4] as precursor. The depositions carried out at 550°C and 1.5Torr in the presence of oxygen (O2 flow rate 20sccm, N2 carrier gas 150sccm, dilute N2 gas 30sccm) led to a growth rate of 4mm/h. As-grown, the films are colourless, smooth and well-adherent to the substrate. SIMS analysis evidenced pure ZrO2 with a slight superficial carbon contamination. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs.