Fabrication and Characterization of Quasi-Optical Terahertz Nanorectifiers with Integrated Antennas

We are developing microelectronic terahertz rectifiers by scaling down the dimensions of GaAs Schottky diodes and field-effect transistors to the sub-micron range, and by investigating the effect of on-chip parasitic capacitances on the square-law power detection signal. For broadband operation at THz frequencies the terahertz oscillating signal is fed to the device by integrated lithographic planar antennas, suitably coupled to a silicon substrate lens. Such room-temperature THz detectors can be fabricated in arrays and naturally provide picosecond response time, suitable for detection of coherent THz radiation produced by single electron bunches in accelerators.