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Dephasing in strongly anisotropic black phosphorus

Academic Article
Publication Date:
2016
abstract:
Weak localization was observed in a black phosphorus field-effect transistor 65 nm thick. The weak localization behavior was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1 T, from which characteristic scattering lengths could be inferred. The temperature dependence of the phase coherence length L-phi was investigated, and above 1 K, it was found to decrease weaker than the L-phi proportional to T-1/2 dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes.
Iris type:
01.01 Articolo in rivista
Keywords:
black phosphorus; field-effect transistor
List of contributors:
Telesio, Francesca; Ienco, Andrea; Caporali, Maria; Peruzzini, Maurizio; SERRANO RUIZ, Manuel; Heun, Stefan
Authors of the University:
CAPORALI MARIA
HEUN STEFAN
IENCO ANDREA
SERRANO RUIZ MANUEL
Handle:
https://iris.cnr.it/handle/20.500.14243/326350
Published in:
PHYSICAL REVIEW. B
Journal
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