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Thomas-Fermi model of electronic screening in semiconductor nanocrystals

Academic Article
Publication Date:
2006
abstract:
Using first-principle density-functional theory in the GGA approximation we have studied the electronic screening in semiconductor nanocrystals. Combining simple electrostatics and the Thomas-Fermi theory it is shown that an analytical and general form of a model position-dependent screening function can be obtained. Taking as a case study silicon nanocrystals, the relative weights of the nanocrystal core and surface polarization contribution to the screening are thoroughly discussed. The connection between the screening at the nanoscale and in the bulk is clarified.
Iris type:
01.01 Articolo in rivista
Keywords:
QUANTUM DOTS; SILICON; IMPURITIES
List of contributors:
Ninno, Domenico; Degoli, Elena; Cantele, Giovanni; Ossicini, Stefano
Authors of the University:
CANTELE GIOVANNI
Handle:
https://iris.cnr.it/handle/20.500.14243/464551
Published in:
EUROPHYSICS LETTERS (PRINT)
Journal
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URL

http://iopscience.iop.org/0295-5075/74/3/519/
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