Effect of vertical size uniformity on diffraction contrast images of stacked InGaAs/GaAs quantum dots
Contributo in Atti di convegno
Data di Pubblicazione:
2001
Abstract:
A detailed TEM investigation was performed on capped single and vertical ly stacked In0.5Ga0.5As/GaAs quantum dots (QDs). The different diffraction contrast observed from the plan-view TEM images in the samples was correlated to the strain fields in the 3D islands.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Catalano, Massimo; Taurino, Antonietta
Link alla scheda completa:
Titolo del libro:
Proceedings of the 25th international conference on the physics of semiconductors
Pubblicato in: