Solid state reactions between SiC and Ir

Reactivity between SiC and Ir as a function of SiC-crystallinity was investigated by diffusion bonding technique under a vacuum and over the temperature range of 1200-1450 °C. As reaction products, various Ir-silicides and free unreacted-C were detected. Reactivity is strongly affected by the temperature and SiC-crystallinity involving a series of interactions, from "no reaction" to "massive exothermic reactions". In particular, interfacial phenomena are more pronounced by the presence of defects and grain boundaries. Solid state reactions result in formation of fine C-precipitates rearranged in a quasi-periodic microstructure. On the contrary, clustering of highly ordered C-precipitates (C-graphitized) occurs after "massive reactions" take place. A relationship between the degree of graphitization (from 1 to multi-layers of graphene), temperature and SiC crystallinity was found by Raman spectroscopy. 2D-layering phenomenon is enhanced in polycrystalline SiC at high temperature.