Forward current of Al⁺ implanted 4H-SiC diodes: A study on the periphery and area components

The temperature dependence of the bulk and periphery forward current components of vertical 4H-SiC p-i-n diodes, with Al implanted circular anodes of diameters in the range 150-1000 ?m, have been obtained from the analysis of the results of forward current-voltage measurements in the temperature range 30-290°C. The zero voltage bulk and periphery current densities at different temperatures have been used to compute the temperature dependence of: (i) the effective carrier lifetime in the space charge region, (ii) the minority carrier diffusion coefficient to lifetime ratio in the base region, and (iii) a surface quality parameter.