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Raman scattering study of InAs nanowires under high pressure

Articolo
Data di Pubblicazione:
2014
Abstract:
The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ~58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase in phonon frequencies is observed, whereas splitting between longitudinal and transversal optical phonon modes decreases as a function of applied pressure. The calculated mode Grüneisen parameters and Born's transverse effective charge indicate that the wurtzite InAs nanowires exhibit a more covalent nature under compression.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
born's transverse effective charge; Grüneisen parameters; high pressure Raman; high pressure XRD; wurtzite InAs nanowire
Elenco autori:
Ercolani, Daniele; Sorba, Lucia
Autori di Ateneo:
ERCOLANI DANIELE
SORBA LUCIA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/280017
Pubblicato in:
NANOTECHNOLOGY (BRISTOL, ONLINE)
Journal
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http://www.scopus.com/inward/record.url?eid=2-s2.0-84909983262&partnerID=q2rCbXpz
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