Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Silicon Carbide (SiC) is a relatively new entry in the world of solid-state detectors. Although SiC response to neutrons is more complex than the one obtained with diamonds, the measured energy resolution (FWHM/E-d <4%) makes SiC an interesting alternative to diamond and silicon detectors for fast neutrons. The results obtained from the measurements of the response of a 100 um thick SiC detector to neutrons in the energy range between 3 and 20 MeV at the n_TOF spallation source at CERN are presented in this paper. By selecting the neutron energy by means of the time of flight, the detector response to quasi-mono-energetic neutrons was measured. The main neutron-induced nuclear reactions were identified in the measured pulse height spectrum. Detection efficiency as a function of neutron energy was measured and interpreted based on available neutron cross section and by making use of Monte Carlo simulations.