Pressure and rf power effects on optical and electrical properties of a-SiC:H films grown in SiH4-C2H2 gas mixtures".

Hydrogenated amorphous silicon-carbon films have been grown by plasma enhanced chemical vapour deposition from silane-acetylene gas mixtures by fixing the acetylene ratio in the gas phase and by changing rf power and pressure. The effect of deposition parameters on film properties has been studied by different techniques. It has been found that the carbon and the hydrogen amount bonded to it decrease with increasing the rf power and with decreasing the pressure, affecting the optical, electrical properties and the silicon-carbon alloy quality.