Publication Date:
1987
abstract:
Capacitance DLTS measurements have been performed in VPE. GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semiinsulating substrates. A band of electron traps was detected near the metal (gate)-semiconductor interface. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra in samples prepared on Cr-doped substrates. The feature of this positive capacitance transient have been analyzed and discussed.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Gombia, Enos; Mosca, Roberto
Book title:
17th European Solid State Device Research Conference, 1987. ESSDERC '87.