Hydrogenation of GaAs during MBE Growth

n this paper we report on the hydrogénation of GaAs which takes place when MBE growth is performed in the presence of atomic hydrogen. In Sn-doped GaAs (Nd-Na< lO'^ cm-3) grown under this condition, we observe: 1) a significant decrease of both shallow donor and acceptor concentrations and 2) the reduction of Ml, M3, and M4 deep level densities. By comparing our results with those obtained by post-growth hydrogénation processes, such as exposure to hydrogen plasma and low-energy hydrogen implantation, it can be concluded that the effects 1) and 2) can be ascribed to the interactio of defects with atomic hydrogen incorporated during the growth