X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge

X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of lutetium oxide films with a germanium substrate. Lu2O3 films were grown on Ge (100) by atomic layer deposition. The conduction- (CBO) and valence- (VBO) band offsets of the Lu2O3/Ge heterojunction were determined to be 2.2 +/- 0.1 and 2.9 +/- 0.1 eV respectively. Internal photoemission measurements performed on metal-oxide-semiconductor devices gave a CBO of 2.1 +/- 0.1 eV and a VBO of 3.0 eV, in excellent agreement, within the experimental error, with the values obtained by XPS. Copyright (C) 2006 John Wiley & Sons, Ltd.