Silica-based thin films by PE-CVD: an XPS characterization

Hybrid silica-based SiOxCyHz thin films were deposited via plasma enhanced-chemical vapor deposition PE-CVD on SiO2, Si100 and Cu substrates starting from tetramethoxysilane TMOS as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power from 20 to 80 W was investigated in detail. This work is devoted to the XPS x-ray photoelectron spectroscopy characterization of a representative SiOxCyHz thin film supported on Sil00 and synthesized at 80 W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.