Highly-doped implanted pn junction for SiC Zener diode fabrication

High temperature high energy multiple implantation has been used to form a two side highly doped pn-junction. The objective was to generate a Zener effect and evaluate the characteristics of the resulting Zener diodes. Both room temperature and 305degreesC implantations have been performed through a protection mask layer. Higher impurities activation is obtained with the 305degreesC implantation after a 1700degreesC annealing. Fabricated Zener diodes presents similar characteristics to epitaxied diodes and exhibit a high reverse Pulsed current capability.